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Bulletin I27092 rev. A 09/97
IRK.F132.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-paka Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
130 A
Description
These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz It
2
IRK.F132..
130 90 293 3210 3360 51.5 47.0 515 15 2 up to 800 - 40 to 125
Units
A C A A A KA 2s KA 2s KA 2s s s V
o
@ 50Hz @ 60Hz
I 2t tq t rr VDRM / V RRM TJ range
C
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1
IRK.F132.. Series
Bulletin I27092 rev. A 09/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 IRK.F132.. 08
VRRM/VDRM, maximum repetitive peak reverse voltage V
400 800
VRSM , maximum nonrepetitive peak rev. voltage V
400 800
IRRM/I DRM max.
@ T J = 125C
mA
30
Current Carrying Capacity
ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 250 320 240 210 160 50 80% VDRM 50 60 90 420 530 390 340 275 50
o
Frequency f
ITM 180 el
o
ITM 100s
Units
408 485 400 340 300 50
640 800 650 530 415 50
2465 1470 540 340 50
3460 2150 830 530 50
A A A A A V V
80% VDRM 60 90
80% VDRM 60
A/ s C
47 / 0.22 F
47 / 0.22 F
47 / 0.22 F
On-state Conduction
Parameter
IT(AV) Maximum average on-state current @ Case temperature IT(RMS) Maximum RMS current ITSM Maximum peak, one-cycle, non-repetitive surge current
IRK.F132..
130 90 293 3210 3360 2700 2825
Units Conditions
A C A A TC = 90C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125C 180 conduction, half sine wave
I2t
Maximum I2 t for fusing
51.5 47.0 36.5 33.3
I2 t
Maximum I2t for fusing
515 1.16 1.25 0.92 0.77 1.71 600 1000
KA2s t = 0 to 10ms, no voltage reapplied V (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. mW (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. V mA mA Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse TJ = 25C, IT > 30 A TJ = 25C, VA = 12V, Ra = 6, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F132.. Series
Bulletin I27092 rev. A 09/97
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
IRK.F132..
800
Units Conditions
A/s Gate drive 20V, 20, tr 1ms, VD= 80% VDRM T J = 25C ITM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25C ITM = 350A, T J = 125C, di/dt = -25A/s, s VR = 50V, dv/dt = 400V/s linear to 80% V DRM
trr tq
Maximum recovery time Maximum turn-off time
2 L 15
s
Blocking
Parameter
dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 30 V mA 50 Hz, circuit to base, TJ = 25C, t = 1 s TJ = 125C, rated VDRM/VRRM applied
IRK.F132..
1000
Units Conditions
V/s TJ = 125C., exponential to = 67% VDRM
Triggering
Parameter
P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger
IRK.F132..
60 10 10 5 200 3 20 0.25
Units Conditions
W W A V mA V mA V TJ = 125C, rated VDRM applied TJ = 25C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125C, f = 50Hz, d% = 50 TJ = 125C, tp < 5ms
Thermal and Mechanical Specifications
Parameter
TJ T stg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque 10% IAP to heatsink busbar to IAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.035 K/W Mounting surface flat and greased Per module
A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound
IRK.F132..
- 40 to 125 - 40 to 150 0.17
Units Conditions
C
K/W
Per junction, DC operation
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IRK.F132.. Series
Bulletin I27092 rev. A 09/97
RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
0.016 0.019 0.024 0.035 0.060 0.011 0.020 0.026 0.037 0.060
Units
K/W
Conditions
TJ = 125C
Ordering Information Table
Device Code
IRK
1 1 2 3 4 5 - Module type - Circuit configuration - Fast SCR
T
2
F
3
13
4
2
5
-
08
6
H
7
L
8
N
8
- Current rating: IT(AV) x 10 rounded - 1= 2= option with spacers and longer terminal screws option with standard terminal screws
6 7 8 9
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H 400V/s - tq code: L 15s - None = Standard devices N = Aluminum nitrade substrate
NOTE: To order the Optional Hardware see Bulletin I27900
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IRK.F132.. Series
Bulletin I27092 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0
For all types IRK...1 IRK...2
A 25 (0.98) 23 (0.91)
B ---30 (1.18)
C ---36 (1.42)
D 41 (1.61) ----
E 47 (1.85) ----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
130 120 110
Conduction Angle
130 120 110
Conduction Period
IRK.F132.. Series R thJC (DC) = 0.17 K/W
IRK.F132.. Series R thJC (DC) = 0.17 K/W
100 90 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A)
100 90 80 70 0 25 50 75 100 125 150 175 200 225 Average On-state Current (A) 30 60 90 120 180 DC
30 60 90 120 180
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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IRK.F132.. Series
Bulletin I27092 rev. A 09/97
Maximum Average On-state Power Loss (W) 200 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 Average On-state Current (A) RMS Limit
Conduction Angle
180 120 90 60 30
Maximum Average On-state Power Loss (W)
300 250 200 150 RMS Limit 100 50 0 0 40 80 120 160 200 240 Average On-state Current (A)
Conduction Period
DC 180 120 90 60 30
IRK.F132.. Series Per Junction T J = 125C
IRK.F132.. Series Per Junction T J = 125C
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 IRK.F132.. Series Per Junction 0.1 Pulse Train Duration (s) 1
Peak Half Sine Wave On-state Current (A)
3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1
At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V RRM Reapplied
IRK.F132.. Series Per Junction 10 100
1200 0.01
Number Of Equal Amplitude Half Cyc le Curre nt Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10000 Instantaneous On-state Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
1 Steady State Value R thJC = 0.17 K/W (DC Operation) 0.1
1000 T J = 25C T J = 125C
100
Transient Thermal Impedance Z thJC (K/W)
0.01 IRK.F132.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100
IRK.F132.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
6
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IRK.F132.. Series
Bulletin I27092 rev. A 09/97
Maximum Reverse Recovery Charge - Qrr (C) 250 IRK.F132.. Series T J = 125 C
I TM = 500 A 300 A 200 A
Maximum Reverse Recovery Current - Irr (A)
150 IRK.F132.. Series T J = 125 C
I TM = 500 A 300 A 200 A 100 A 50 A
200
120
150
100 A
90
100
50 A
60
50
30
0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovery Charge Characteristics
1E4
IRK.F132.. Series Sinusoidal Pulse T C = 90 C Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Fig. 10 - Reverse Recovery Current Characteristics
Peak On-state Current (A)
tp
50 Hz 150 400 1000 2500 5000
50 Hz 150
1E3
2500 5000
400 1000
tp
IRK.F132.. Series Sinusoidal Pulse T C = 60 C
Snubber c ir cuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
1E4
IRK.F132.. Series Trapezoidal Pulse T C = 90C, di/dt 50A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
IRK.F132.. Series Trapezoidal Pulse T C = 90C, di/dt 100A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Peak On-state Current (A)
tp
tp
50 Hz
1E3
400
1000
150
400 1000 2500 5000
150
50 Hz
2500 5000
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
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7
IRK.F132.. Series
Bulletin I27092 rev. A 09/97
1E4
IRK.F132.. Series Trapezoidal Pulse T C = 60C, di/dt 50A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM IRK.F132.. Series Trapezoidal Pulse T C = 60C, di/dt 100A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Peak On-state Current (A)
tp
tp
50 Hz
1E3
2500 5000
1000
400
150 1000 2500 5000
150 400
50 Hz
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
1E4
10 joules per pulse
10 joules per pulse 5 1 0.5 0.25 0.1 0.05 2.5
Peak On-state Current (A)
5 0.5 1 2.5
1E3
0.1 0.05
0.25
1E2
IRK.F132.. Series Sinusoidal pulse
tp IRK.F132..Series Trapezoidal Pulse di/dt 50A/s
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s 10 (a) (b)
Tj=-40 C Tj=25 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W,
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
Tj= 125 C
1 VGD IGD 0.1 0.01
(1)
(2)
(3) (4)
IRK.F132.. Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
8
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